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This paper addresses some relevant issues and recent developments concerning the analysis and simulation of electrothermal effects in bipolar devices and circuits
Transistor mismatch is a key parameter for the design and operation of advanced analog circuits. The paper presents for the first time data from several generations of BiCMOS technology nodes for VBE and current gain (beta) mismatch. The authors show that the 0.12 mum BiCMOS has a 3-a VBE mismatch of 0.63 mV-mum and beta mismatch of 0.24 %-mum. CBE NPNs have essentially the same but slightly lower...
RF and other high-frequency bipolar circuits operating at 1-5 GHz have been ESD protected using the human body model test to 2kV. The described design and modeling techniques minimize the operating parasitics, chip area, and number of process turn-arounds
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