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Long channel Ge FETs and capacitors with CeO2/HfO2 /TiN gates were fabricated by photolithography and gate wet etch. Rare earth CeO2 in direct contact with Ge was used as a passivating layer producing lowest Dit values in the mid 10 11 eV-1cm2 range. HfO2 cap reduces leakage and improves equivalent oxide thickness scaling of the whole gate stack. The p-FETs show exceptionally high ION/I OFF ratio...
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