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The authors report for the first time a high performance Schottky-barrier S/D transistor with strained-Si/SiGe multiple-quantum-well channel (MQW-SBT). Through dopant-segregation at Ni-silicide/Si interface and utilizing the smaller bandgap of channel materials, Schottky-barrier height was modulated resulting in Phib (to electron) ~0.13eV in n-MOS and Phib (hole) ~0.086 eV in p-MOS. This enhanced...
This paper presents a study of the integration of a TOSI gate process on fully-depleted SOI devices by using a CMP-less approach and a detailed electrical characterization of NMOS and PMOS transistors, including transport properties. Tuning of the workfunction has been observed for the NMOS devices by doping the polysilicon before gate silicidation. Functional PMOS and NMOS devices have been tested...
We report the simultaneous improvement of both on- and off-properties for n- and p-channel MOSFETs by means of carbon co-implantation at extension level, using conventional spike annealing. For the first time, spike-annealed NFETs with phosphorus-implanted source/drain extensions (SDE) are shown to outperform conventional As-implanted devices in the deca-nanometric range. Parameters such as on-current,...
For the first time, threshold voltage matching was measured on multiple gate transistors, and particularly on n-channel gate-all-around transistors (GAA) with both doped and undoped channel. Good matching performance is demonstrated on doped channel transistors, thanks to the absence of pocket nor halo implants. But most of all, it is shown that suppressing the channel doping allows to suppress the...
In this paper, the authors study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. The authors demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel...
Deep level manganese doping by ion implantation and rapid thermal annealing have been used for the first time to make very high resistivity Czochralski silicon substrates up to 10 kOmegacm and on the average, this is nearly a ten-fold increase over the resistivity of the undoped starting wafer. The material is ideally suited for making semi-insulating silicon handle wafers for radio frequency silicon...
Shallower junctions must be formed to make transistors work for the 32-nm node. Many kinds of technologies, such as co-implantation, laser spike annealing (LSA), and flash lamp annealing, have been energetically studied to form ultra-shallow junctions. We focused on in-situ doped selective Si epitaxy, with which the short channel effect and the parasitic resistance can be made compatible. Using this...
AlGaN/GaN power high electron mobility transistors (HEMTs) with a Fe-doped GaN buffer on a Si substrate were presented for high power switching applications. In order to investigate the effects of an Fe-doped GaN buffer on device characteristics, HEMT devices with an Fe-doped GaN buffer on Si were fabricated alongside with the conventional devices utilizing an unintentionally doped (UID) GaN buffer...
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