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In this work, the authors investigate the accuracy of the parabolic-band model for the simulation of cylindrical nanowire (CNW) FETs scaled down to a 1-nm diameter. Doing so, rely on a recently-published results based on a tight-binding computation of the band structure in square-and circular-section nanowires. The above results indicate that the FET characteristics are affected in two ways by the...
In this work we investigate the performance of fully-depleted silicon-on-insulator (SOI), double-gate (DG) and cylindrical nanowire (CNW) FETs, with the aim of establishing optimization procedures and appropriate scaling rules towards their extreme miniaturization limits. The simulation model fully accounts for quantum electrostatics; current transport is modeled by an improved quantum drift-diffusion...
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