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For the purpose of 90nm technology node RF CMOS geometry optimization, the effect of geometrical variations on the high frequency characteristics are precisely analyzed utilizing a three dimensional TCAD device simulator. After showing the accuracy of small-signal 3D TCAD simulation, the dependence of MOSFET's gate resistance on gate width is analyzed with the results showing that when gate width...
This paper reports on a new process to realize impact-ionization MOSFETs (I-MOS) with gate length down to 50nm. This process is an adaptation of a standard 90nm flow, which assures a perfect compatibility with conventional CMOS. The definition of the n+ and p+ regions of the I-MOS is based on two shifted lithography steps using the standard source/drain mask. An analytical model for the breakdown...
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