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The following topics are dealt with: high performance MOSFET; electron transport and noise; advance gate stack; MEMS; microsensors; novel gate-stack CMOS solutions; advanced nanoscale device transport models; RF passive integration; carbon nanotubes; memory circuits; NVM high-K dielectrics; high voltage devices; injection devices; transport devices; imagers; light emitting devices; process integration;...
This talk describes how new understanding of conduction at the molecular scale can inform nanoscale MOSFET device engineering. A 'bottom-up' approach developed to explain conduction in molecules will be applied to the analysis of nanotransistors. The generalization of the simple approach to a rigorous treatment of quantum transport with dissipation will be introduced. Some results on the ultimate...
A numerical study of carbon nanotube field effect transistors is presented. To investigate transport phenomena in such devices the non-equilibrium Green's function formalism was employed. Phenomena like tunneling and electron-phonon interactions are rigorously taken into account. The effect of geometrical parameters on the device performance was studied. Our results clearly show that device characteristics...
The paper reports high frequency (HF) performance of carbon nanotube field-effect transistors (CNT-FETs) with S-parameters measurements. The optimized device structure achieves current gain cut-off frequency FT of 1 GHz, with a slope of -20dB/decade, for the first time
The interest in carbon nanotubes (CNTs) for electronic applications is predominantly based on the outstanding properties of single walled CNTs, which include ballistic transport and high thermal conductivity. However, there is a need to avoid the standard metal catalysts used for CNT growth, which act as "lifetime killers" for silicon devices. Here the authors present a Ge catalyst growth...
This paper have investigated the threshold voltage dispersion and the impurity scattering limited mobility in carbon nanotube field effect transistors with randomly doped source and drain extensions. Accurate transport simulations have been performed solving the self-consistent 3D Poisson-Schrodinger equation, within the non-equilibrium Green's function formalism. In particular, non-ballistic transport...
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