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Nanostructure characterization of carbon nanofibers (CNFs) for on-chip interconnect applications is presented. We propose a novel technique for characterizing interfacial nanostructures of vertically aligned CNFs, optimally suited for cross-sectional imaging with scanning transmission electron microscopy (STEM). Using this technique, vertically aligned CNFs are selectively grown by plasma-enhanced...
As semiconductor process technology rapidly develops into deep-sub-micron or nanometer regime, the feature size of semiconductor devices continues to shrink down. As a result, the defect being able to cause a device malfunction is also becoming smaller and smaller, and even certain defect is invisible with high-resolution SEM or TEM. It makes conventional physical failure analysis (PFA) face a great...
This paper presents a successful methodology for TEM sample preparation on indium pre-form thermal interface material (TIM), which is currently used in high-performance microprocessor product. Experimental results show that FIB related artifacts are greatly reduced, thus enables phase morphology study of inter-metallic compound (IMC) layers between TIM and IC chip
Surface charging is encountered in the study Auger electron spectroscopy of non-conducting surfaces. In this paper, two case studies of (i) Au-pad of packaged die unit and (ii) floating Al-pads of patterned wafer were presented. Surface charging was noticed in both the samples and it was not possible to eliminate the effect with convention charge reduction methods. Two FIB-based methods of charge...
In this paper, we demonstrate a practical alternative to the conventional SIL, which overcomes the above limitations. We show that it is possible to fabricate a lens directly on the back side of the silicon of the device under test. This lens works on principles of diffractive optics and is around 250 nm thick. The lens may be fabricated in about 1 hour, using a combination of FIB ion implantation...
Detection of killer defects is critical to improving yields in VLSI fabrication. Bright and dark-field inspection tools detect both killer and non-killer defects, and in some cases a high level of nuisance defects may adversely affect the ability to monitor and eliminate the real ones that have a detrimental impact on device yield. E-beam inspection tools take advantage of a phenomenon referred to...
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