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In this paper, we discuss the physical principles of set of new measurement techniques to explore the reliability limits of (time dependent) dielectric breakdown (TDDB) and negative bias temperature instability (NBTI), two major reliability concerns of high performance logic/memory transistors. Our analysis of the techniques provides a sound theoretical foundation of the measurement algorithms. This...
In summary, the implementation of a Co(W,P) cap only on the Cu lines is able to improve the dielectric breakdown performance in Cu/low-k interconnects. This is due to the elimination of the weak interface between the cap and the low-k dielectric. However, the thickness of the Co(W,P) cap needs to be optimized in order to fully benefit from the breakdown improvement while maintaining its efficiency...
During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challenges. In this paper, a comprehensive reliability evaluation for...
The leakage current in electrically stressed MOS structures with ultrathin lanthanum oxide (La2O3) films was investigated. The samples were obtained by the electron-beam evaporation technique and annealed in-situ in ultra-high vacuum conditions. We show that the application of successive voltage ramps leads to a set of current-voltage (I-V) characteristics that can be simulated using a power-law model...
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