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In this paper, a new twin gated-diode (T-GD) method has been greatly improved for the oxide interface characterization of MOS devices with gate oxide as thin as 1 nm (EOT). With the scaling of gate oxide thickness into 1 nm regime, reported GD measurement can not give correct measurement due to gate tunneling leakage current. Here, we provide a simple method to remove this limitation. This method...
This paper describes a thorough investigation to identify the root cause of an LCD panel burn-in failure induced by an LCD source driver, which is observed in a large-scale LCD factory producing more than one million LCD panels per month. The investigation demonstrates the effectiveness of the circuit simulation to precisely locate the defective spot which is caused by a metal slice originated from...
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