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The evolution of laser sources has led to the advent of new laser-based techniques for failure analysis. The pulsed OBIC (optical beam induced current) technique is one of them, which is based on the photoelectric laser stimulation of the device under test (DUT) at a micrometric scale. The suitability of this technique to localize failure sites resulting from electrostatic discharges (ESD) has previously...
A proposed method for failure analysis and debugging of electrostatic discharge protection in VLSI circuits is presented, based on low-energy non-destructive emulation of real ESD stress. It allows on-die current and voltage measurements during stress, providing a direct and clear conclusion about the proper functioning of the protection method, or a reason for failure
Electrical and SEM analysis of gate-silicided (GS) and gate-non-silicided (GNS) ESD NMOSFETs in a 65nm bulk CMOS technology show that the failure mechanism switches away from classical drain-to-source filamentation when the silicidation between the silicide-blocked drain/source and the polysilicon gate is avoided. For 2.5V thick oxide devices, drain-to-substrate junction shorting was observed, whereas,...
Failure analysis (FA) is key in root cause identification for any problem solving journey. Diagnosis given provides insights on mechanisms by which failures occur. This helps in determining factors that lead to the failure and consequently the root cause, thus easier to provide corrective actions. In mid June 2004, a sudden increase in test fall-outs was encountered. Several devices from different...
The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design
Complex ESD failure mechanisms have been found in the interface circuits of an IC product with multiple separated power domains. The MM ESD robustness can not achieve 150 V in this IC product with separated power domains, although it has the 2-kV HBM ESD robustness. The ND-mode MM ESD currents were discharged by circuitous current paths through interface circuits to cause the gate oxide damage, junction...
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