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This paper presents reliability investigations in NLDEMOS transistor in 0.13μm SOI CMOS technology. Reliability tests under hot carrier injections (HCI) for different gate-lengths show two different degradation mechanisms. The modification of current path with short overlap (Olap) due to oblique equi-potential lines and the increase in the vertical electrical field under the gate edge at low V g lead...
During the development and qualification of a 300mm low-k/Cu back end of line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu electromigration (EM), Cu stress migration (SM), and Cu/low-k thermal behavior are rapidly becoming one of the most critical challenges. In this paper, a comprehensive reliability evaluation for...
Antibody/antigen concept biological sensors as presented in D. Diamond (1998) have shown a very impressive growth in the last decade due to their high selectivity to specific biomolecules. They can allow fast and early detection of various kinds of illnesses and infections. One of the main challenges in this field is to develop biosensors that can be easily inserted within the human body and act as...
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