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For the manufacturing of submicron or deep submicron ULSIs, it is important to completely suppress particles and contamination created on the silicon wafer surface. The tradition concept for cleaning need was used chemical content (APM, ammonia and hydrogen peroxide mixtures) to play a major role. Unfortunately, the SC-1 (APM) had negative effect on surface damage. In recent years, it has been modified...
In this paper, we analyzed the contamination of heavy metals on process wafers before gate oxide deposition. A lot of mushrooms-like defects were easy found in wafer edge. And at that time, a lot of pits also can be found in active region of device, as the silicon substrate had been with heavy metallic contamination. TEM and EDS analysis were used to examine the mushrooms type defects and pits defects...
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