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We report the first direct measurement of the HH2-HH1 relaxation time for a SiGe QW with transition energy above the optical phonon frequency. The experiments have been performed for an active, electrically biased SiGe structure, and thus our results constitute a key parameter for the design and dynamic simulation of SiGe quantum cascade laser structures. The paper presents the 'as-measured' photocurrent...
We have demonstrated a simple method to fabricate the MIM PD with Ge QDs. 7 nm Ge QDs embedded in SiO2 matrix could be formed by selective oxidation of Si0.85Ge0.15-on-insulator structure. Blue to ultraviolet photoemissions from Ge QDs have been experimentally observed at room temperature due to strong quantum confinement effect. A Ge QD PD with dark current of 3.13 muA/cm2 and responsivity of 85...
By using the low thermal conductivity of SiGe to increase the average temperature along the pn-junction of the structure, the efficiency and power output of our thermoelectric elements can be increased dramatically. Further improvement can be achieved by using optimized graded Ge content to fully adapt the temperature distribution to our needs
We discuss the role of the discrete nature of misfit dislocations in XRD. For this, we consider a large number of different arrays of 60deg misfit dislocations relevant for SiGe/Si hetero-systems and introduce the concept of caustics of increasing order (Trinkaus and Naturf, 1973 and Trinkaus and Drepper, 1977) to determine the XRD peak positions for these arrays
The availability of ultra clean MMS enables the deposition of epitaxial SiGe:C with low oxygen levels without using a purifier in the MMS gas line is discussed in this paper. This improves the robustness of epitaxial production processes. The reproducibility in gas composition of the MMS/H2mixture, which circumvents the need for process re-qualification after bottle replacement, is also demonstrated
Self-assembled Ge quantum dots have attracted a great deal of interests for the realization of silicon- based quantum electronic and optoelectronic devices, such as mid-infrared quantum dot photodetectors, laser, resonant tunnelling diodes, etc. Here, we report on the fabrication of the high density Ge-dots/Si multilayered structure films combining LPCVD and Ni-based MILC processing. The present work...
Germanium-carbon alloys (Ge1-xCx) were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore Ge1-xCx as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited Ge1-xCx...
P segregation behavior in SiGe:C layer of different Ge content and different growth temperature was investigated. For each Ge content, steepness of P spike became lower with increasing growth temperature. In comparison at the same growth temperature, steepness of P spikes in SiGe:C with 20% Ge content is lower than that with 10% Ge content. The difference becomes higher at higher growth temperature...
In this paper, fabrication of the dual channel CMOS devices based on the Ge-condensation technique is demonstrated as well as their mobility and current drive enhancements. Ge-rich strained SGOI pMOSFETs were integrated with strained Si/SGOI nMOSFETs by a CMOS process combined with the Ge condensation process, in which the strain in the SGOI layers were properly controlled. As a result, significant...
In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110)...
Electronics built on flexible polymer substrates have great potential for a number of applications. The largest potential lies in active-matrix flat-panel display applications, because of the continually increasing demand for light weight and robustness from wireless technologies. For the back-plane circuitry of active-matrix organic light emitting diodes (AMOLEDs), high transconductance (gm ) and...
In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation
We report the fabrication of a novel substrate platform for the monolithic integration of Si-based CMOS and GaAs-based optoelectronic devices. This platform, which we refer to as silicon on lattice-engineered substrate (SOLES), consists of a compositionally graded SiGe buffer buried underneath a silicon-on-insulator (SOI) structure, all fabricated on a Si substrate
This paper presents growth, characterization and device results for III-V optoelectronic and solar cell heterostructure devices that have been monolithically integrated on Si via ultra low dislocation density SiGe interlayers. Prior work that has demonstrated high performance single junction solar cells (Andre et al., 2005) and visible wavelength LEDs (Kwon et al., 2005) on Si is extended here to...
This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive
In summary, phosphorus diffusivities in germanium were measured after long anneals at temperatures between 600degC and 800degC. The diffusivities are extrinsic (i.e., D ~ (n/ni)2) but are slower than recently reported extrinsic diffusivities and a slightly larger activation energy is also measured in this work than the previous work. Using a diffusion model that includes a segregation term between...
We have demonstrated efficient QCSE in silicon-based structures, using strained Ge MQWs. The behavior of the exciton peaks, the band edge shift and the shift in absorption coefficient are comparable to those observed in III-V materials at similar wavelengths. Our materials and fabrication processes are completely CMOS compatible and suitable for mass production. This approach is therefore very promising...
In this paper, we review the process and layout optimization of thin-film (150nm) SOI SiGe HBTs covering a wide range of fT-BVceo tradeoffs, i.e. from ~150GHz fT to ~8V BVceo. We have shown that a SiGe HBT with bulk-like fT-BVceo trade-off can be built on a CMOS compatible SOI substrate. This HBT can be modularly integrated at low cost (4 masks, < 30 steps) in a 0.13 mum SOI CMOS process (Boissonnet...
Strain engineering using lattice-mismatched S/D in transistors and their combination with other stressors and optimum surface/channel orientations is very attractive and important for the continued improvement of CMOS performance in addition to device scaling
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