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The three stacked Si1-yCy layers with various carbon compositions have been grown by a gas-source MBE system at a temperature of 620degC. The structure is a promising candidate as a virtual substrate for the growth of a compressively-strained Si layer on Si in order to enhance the electron mobility towards the vertical direction. The (004) XRD pattern of the sample consisted of three peaks from the...
The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported...
The optical properties (complex dielectric function) and critical-point parameters for Si1-yCy alloys with high substitutional C content grown pseudomorphically on Si (001) were determined. These data are useful for process control (if such alloys are used in CMOS processing), for example using spectroscopic ellipsometry to determine film thickness, modulation spectroscopy (especially photoreflectance)...
We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant loss of substitution carbon and a change of carbon depth profile. It is also observed that very abrupt...
We have presented the theoretical model for electron mobility in strained Si1-xCx alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si1-xCx, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well
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