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The interest in the Ge/Si heterostructures with self-assembled islands is associated with their potential use for Si-based optoelectronic devices. Due to the effective hole 3D confinement a photoluminescence (PL) signal from Ge(Si) islands was observed up to room temperature. However, only holes are effectively localized in Ge(Si) islands, while electrons are only weakly confined in Si on the heterojunction...
In the last decade, fabrication technology of microelectromechanical system (MEMS) was greatly developed and various devices have been demonstrated. Epitaxial MEMS structure is one of the variations of MEMS structure. The epitaxial MEMS has some advantages such as atomically flat surfaces and possibility of direct implementation of circuitry on the MEMS structure. In this work, we fabricated an epitaxial...
Quantum dots in silicon/silicon-germanium offer several potential advantages for quantum computing, including long spin coherence times and compatibility with silicon device fabrication. Recently, it has become possible to use Schottky gates to define quantum dots in Si/SiGe heterostructures at low temperatures. Here we describe progress in the fabrication and measurement of silicon quantum dots,...
Our experiments demonstrate that Schottky-barrier reducing mechanisms can be overcome by adequately designed Si/SiGe heterostructures and that single electron transistor (SET) functionality can be achieved in modulation-doped Si/SiGe heterostructures with a standard split-gate approach that can easily be integrated into an array of coupled SETs
In summary, the ~1.5 mum Ge QD MOS LED which is fully compatible with ULSI process is reported for the first time. The origin of the emission is due to the radiative recombination between the electrons and holes confined in the Ge QD. The electrons also recombined with holes at the Si/oxide interface and the band edge light emission from Si is also observed
In this paper, we are investigating the silicon growth on such profiles resulting from the vapour phase HCl treatment. Facet apparition and kinetics are investigated as a function of the temperature and initial surface morphology
The authors report the growth of B-doped Si/SiGe multiple quantum wells (MQW) structures by rapid thermal chemical vapor deposition (RTCVD) for intersubband transitions with extreme uniformity and interface abruptness. An excellent well to well uniformity is reported as measured through high resolution SIMS
We have demonstrated control and characterization of strain in SiGe and Ge layers on Si(001) substrates with engineered misfit dislocations at the heterointerface. X-ray microdiffraction revealed quantitatively fine structures in micrometer-sized regions of the SiGe layers. The introduction of PEDN can alter the manner of strain relaxation of SiGe on Si(001) and raise the possibility of solving problems...
To lower C content can keep performance enhancement of strained-Si:C devices since it minimizes the alloy scattering potential, interstitial trap and Dit. The large Dit at oxide/strained-Si:C interface degrades the expected carrier mobility enhancement, but improvement is observed after forming gas annealing. The strained-Si:C channel makes it possible to have high speed devices, improved short channel...
By using the low thermal conductivity of SiGe to increase the average temperature along the pn-junction of the structure, the efficiency and power output of our thermoelectric elements can be increased dramatically. Further improvement can be achieved by using optimized graded Ge content to fully adapt the temperature distribution to our needs
Self-assembled Ge quantum dots have attracted a great deal of interests for the realization of silicon- based quantum electronic and optoelectronic devices, such as mid-infrared quantum dot photodetectors, laser, resonant tunnelling diodes, etc. Here, we report on the fabrication of the high density Ge-dots/Si multilayered structure films combining LPCVD and Ni-based MILC processing. The present work...
Germanium-carbon alloys (Ge1-xCx) were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore Ge1-xCx as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited Ge1-xCx...
In this paper, fabrication of the dual channel CMOS devices based on the Ge-condensation technique is demonstrated as well as their mobility and current drive enhancements. Ge-rich strained SGOI pMOSFETs were integrated with strained Si/SGOI nMOSFETs by a CMOS process combined with the Ge condensation process, in which the strain in the SGOI layers were properly controlled. As a result, significant...
In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110)...
In summary, the reduction of the Schottky-barrier height for the n-type semiconductor under external mechanical strain is observed. This reduction is shown to originate from the reduction of conduction band edge. The boundary condition under uniaxial strain technology is stress-free along the direction perpendicular to uniaxial stress obtain the reasonable agreement between data and theoretical calculation
This paper presents results on conventional, deep sub-micron short-channel Ge p-and nFET devices with a HiK/MG gate stack and NiGe source/drain regions. It is shown that the mobility enhancement observed in long channel Ge pFETs as compared to Si pFETs, can indeed result in deep sub-micron Ge devices with a higher drive
It was found that patterning of Ge and SiGe layers on Si(001) substrates principally leads to the strain anisotropy. The striped mesa structure readily induces elastic relaxation of the strained Ge and SiGe. Furthermore, a clear difference of strain relaxation mechanism depending on the dislocation introduction was confirmed. Introduction of 60deg dislocations is sensitive to the shape of patterned...
In the present work, we investigated the behavior of strain and resistivity by submicron-width stripe patterning of Si/Si0.6Ge0.4/Si(100) heterostructure
Xenon diflouride (XeF2) vapor has been known to be able to spontaneously etch Si isotropically at high rates up to 10 mum/min. This dry etching process does not require plasmas or catalysts, and thus causes little damage to the electronic properties. It is useful for releasing free standing structures by etching away Si sacrificial layers or for gate oxide failure analysis by etching away the backside...
This work investigates NMOSFETs on thick biaxially strained silicon for digital logic applications. Strain and long channel mobility enhancement are shown to be maintained for strained films as thick as 300 nm, 15 times thicker than the equilibrium critical thickness, and misfit-dislocation induced off-current leakage is shown to be completely eliminated for tSi equiv 100 nm. Significant performance...
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