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In this work, using a Ge film as a buffer layer, highly strained Si epitaxial growth on Ge/Si(100) has been investigated. Epitaxial growth of strained Si films on 84 %-relaxed Ge/Si(100) is achieved using ECR plasma CVD without substrate heating. Especially for the thickness of 1.7 nm, strain amount in the strained Si reaches as high as 4 % and it is thermally stable even at 500degC
We present here a study of in-wafer uniformity of in-situ boron concentration in SiGe:C epitaxial layers by SEG. One of the robust designs, the Taguchi method, is used to optimize both uniformity of boron concentration and that of SiGe:C layer thickness with blanket wafers at the same time
The three stacked Si1-yCy layers with various carbon compositions have been grown by a gas-source MBE system at a temperature of 620degC. The structure is a promising candidate as a virtual substrate for the growth of a compressively-strained Si layer on Si in order to enhance the electron mobility towards the vertical direction. The (004) XRD pattern of the sample consisted of three peaks from the...
The availability of ultra clean MMS enables the deposition of epitaxial SiGe:C with low oxygen levels without using a purifier in the MMS gas line is discussed in this paper. This improves the robustness of epitaxial production processes. The reproducibility in gas composition of the MMS/H2mixture, which circumvents the need for process re-qualification after bottle replacement, is also demonstrated
We investigated the effect of dopant implantation and thermal annealing on substitution carbon concentration of Si:C epitaxial film. While spike annealing at T=1050 degC results in slight loss of substitution carbon (0.6%) but maintains high crystalline, phosphorus implantation induces significant loss of substitution carbon and a change of carbon depth profile. It is also observed that very abrupt...
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