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We have demonstrated a simple method to fabricate the MIM PD with Ge QDs. 7 nm Ge QDs embedded in SiO2 matrix could be formed by selective oxidation of Si0.85Ge0.15-on-insulator structure. Blue to ultraviolet photoemissions from Ge QDs have been experimentally observed at room temperature due to strong quantum confinement effect. A Ge QD PD with dark current of 3.13 muA/cm2 and responsivity of 85...
This paper presents a novel high performance photodetector concept. A surface photodetector (SPD) is introduced and integrated with a phototransistor (PT) to form a high performance phototransistor photodetector (PTPD). The device concept has been verified by characterizing the samples prepared with a standard 0.35 mum SiGe BiCMOS process. Compared with the reference PT of the same size, the PTPD...
The raw performance of normal incidence Ge on Si detectors has been found to be close to that of GaAs devices in optical properties at 850nm. In addition the leakage current is nearing that needed for many applications. Further receiver data that quantifies this is presented at the talk
We report about a top-side illuminated Ge photodetector, which is appropriate for transmission of high-speed data at infrared telecommunication wavelengths and is monolithically integrated on a standard Si substrate (Jutzi et al., 2005) for 1552 nm operation. A 3-dB-bandwidth of 38.9 GHz is achieved for a 10 mum diameter detector and a reverse bias of 2 V. These results demonstrate the potential of...
The requirements of Si-based photonic devices in the next generation of chip technologies have caused extensive studies on Ge/Si quantum dot devices. In this communication, we report on lateral three-terminal FET type of photodetectors based on Ge dot layers sandwiched between SiGe QWs, where the near-infrared light was mainly absorbed in the Ge island layers. In addition to the source and drain contacts,...
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