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Globally strained (tensile) silicon-on-insulator (sSOI) is being studied extensively to obtain higher performance CMOS. sSOI offers three key advantages over bulk-Si: (i) reduced parasitic capacitance; and (ii) enhanced electron mobility; and (iii) compatibility with ultra thin SOI device design. Conventionally, sSOI is fabricated by wafer bonding and layer transfer of strain Si. Although this technique...
In this paper, we report the width dependence of short channel effect in strained-Si nMOSFETs. The trade-off between electron mobility enhancement and SCE control for various Ge contents and Si-cap layer thicknesses in the relaxed SiGe buffer are demonstrated. Finally, our work presents the optimum processes window for strained-Si device in advanced CMOS technology
The three stacked Si1-yCy layers with various carbon compositions have been grown by a gas-source MBE system at a temperature of 620degC. The structure is a promising candidate as a virtual substrate for the growth of a compressively-strained Si layer on Si in order to enhance the electron mobility towards the vertical direction. The (004) XRD pattern of the sample consisted of three peaks from the...
In this paper, fabrication of the dual channel CMOS devices based on the Ge-condensation technique is demonstrated as well as their mobility and current drive enhancements. Ge-rich strained SGOI pMOSFETs were integrated with strained Si/SGOI nMOSFETs by a CMOS process combined with the Ge condensation process, in which the strain in the SGOI layers were properly controlled. As a result, significant...
Application of stress to Si causes a deviation of its lattice constant from the equilibrium value, thereby modifying the electronic band structure. A phenomenological approach to calculate the mobility tensor for electrons in strained Si at high electric fields has been proposed. The model is intended for implementation in drift-diffusion based device simulators
The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported...
We have presented the theoretical model for electron mobility in strained Si1-xCx alloys. Theoretical calculations predict that electron transport is enhanced in undoped strained Si1-xCx, alloys with lower alloy scattering potential. The results show that the calculated mobilities from our model matches with the experimental results well
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