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In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110)...
We have demonstrated the growth of strain-relaxed Ge1-xSnx buffer layers using virtual Ge(001) substrates. PDA effectively promoted the relaxation of the Ge1-x Snx layer, concomitantly with the lateral propagation of preexisting threading dislocations leaving misfit segments at the Ge 1-xSnx/Ge interface. Present results open up a scheme of fabricating strained channels which realize much high performance...
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