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Germanium-carbon alloys (Ge1-xCx) were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore Ge1-xCx as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited Ge1-xCx...
The growth of epitaxial strained silicon-carbon alloys are of great interest for use in the source-drain regions of MOSFETs to induce tensile strain in channel regions to enhance electron carrier mobility. In this work, the growth of epitaxial Si1-yCy alloys by chemical vapor deposition with high substitutional carbon fractions (y~1.8%) and extremely high growth rates at 575degC (~20nm/min) are reported...
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