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A high-quality Ge epilayer on Si has emerged as a viable method to integrate III-V optoelectronics and to achieve high carrier mobility than conventional Si-based CMOS devices. The epilayer quality is often measured by the density of threading dislocations that adversely impact the carrier transport. A number of strategies have been developed in recent years to reduce the threading dislocation density...
We have demonstrated a simple method to fabricate the MIM PD with Ge QDs. 7 nm Ge QDs embedded in SiO2 matrix could be formed by selective oxidation of Si0.85Ge0.15-on-insulator structure. Blue to ultraviolet photoemissions from Ge QDs have been experimentally observed at room temperature due to strong quantum confinement effect. A Ge QD PD with dark current of 3.13 muA/cm2 and responsivity of 85...
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