We have designed and fabricated a nonvolatile SRAM (NVSRAM) integrated with ferroelectric HfO2 capacitor, and experimentally demonstrated its nonvolatile functionality, for the first time. Sub-10nm-thick ferroelectric HfO2 capacitor shows excellent ferroelectricity and memory characteristics at low supply voltage. The NVSRAM with ferroelectric HfO2 capacitor is capable of storing and recalling previous memory state before power shutdown, which is suitable for the intermittent operation of IoT devices with deep-sleep mode. The NVSRAM with ferroelectric HfO2 capacitor can be a cost-effective, normally-off and ultralow power embedded memory solution.