In this paper, we systematically examined the impact of fin height ( $H_{\mathrm{ Fin}} $ ) and fin angle ( $\theta _{\mathrm{ Fin}} $ ) on the ac performance parameters including total gate capacitance ( $C_{\mathrm{ gg}} $ ), $RC$ delay ( $C_{\mathrm{ gg}}V_{\mathrm{ DD}}/I_{\mathrm{\scriptscriptstyle ON}}$ ), cutoff frequency ( $f_{T}$ ), energy ( $E$ ), total power ( $P_{\mathrm{ Total}} $ ), and leakage power ( $P_{\mathrm{ Leakage}}$ ) of hybrid FinFETs at the supply voltage, $V_{\mathrm{ DD}} $ with on-current $I_{\mathrm{\scriptscriptstyle ON}}$ . The $RC$ delay, energy, and total power consumption are the primary factors limiting the operating frequency of the high-performance devices. Therefore, these electrical parameters are needed to be addressed in the architectural level of the fin based devices. In this paper, a calibrated numerical device simulation tool is used to achieve the best device performances of 14-nm hybrid FinFETs. From the simulated current–voltage ( $I$ – $V$ ) and capacitance–voltage ( $C$ – $V$ ) characteristics of hybrid FinFETs, the parameters $C_{\mathrm{ gg}} $ , $C_{\mathrm{ gg}}V_{\mathrm{ DD}}/I_{\mathrm{\scriptscriptstyle ON}}$ , $f_{T}$ , CV2, $P_{\mathrm{ Total}}$ , and $P_{\mathrm{ Leakage}} $ are extracted to analyze the effect of $H_{\mathrm{ Fin}} $ and $\theta _{\mathrm{ Fin}} $ on the performance matrices of these devices. In addition, this paper proposes an optimum structural configuration for 14-nm hybrid FinFET architecture for digital application perspective.