This simulation work studies whether band-to-band-tunneling leakage in short-channel germanium FinFETs and nanowires can be mitigated by the band gap widening resulting from quantum confinement. Through a combination of drift-diffusion and coupled Poisson-Schrödinger simulations, two possible solutions are investigated: can the BTBT rate be lowered sufficiently? Secondly, can the tunnel path be cut off by band gap widening? Our results indicate that by exploiting the band gap widening in narrow devices, gate-induced drain leakage due to band-to-band tunneling in Ge FinFETs and nanowires can meet the high-performance and low operating power off-state leakage specifications of CMOS technology. However, the low standby power off-state target seems out of reach.