We report a record-setting low NMOS contact resistivity of 1.2×10−9 Ωcm2 compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser anneal. Additionally, we show that short-pulse nanosecond laser as post implant anneal provides a promising pathway to further improve NMOS ρC to below 1×10−9 Ωcm2 for the post 7 nm nodes.