This paper presents a 500–600 GHz submillimeterwave MEMS-reconfigurable phase shifter. It is the first ever RF MEMS component reported to be operating above 220 GHz. The phase shifter is based on a micromachined rectangular waveguide which is loaded by 9 E-plane stubs, which can be individually blocked by using MEMS-reconfigurable surfaces. The phase-shifter is composed of three metallized silicon chips which are assembled in H-plane cuts of the waveguide. The measurement results of the first prototypes of the MEMS reconfigurable phase shifter show a linear phase shift of 20° in 10 steps (3.3 bit) and have a return loss better than 15 dB from 500–600 GHz. The insertion loss is better than 3 dB up to 540 GHz, and better than 5 dB up to 600 GHz for all phase states, of which the major part is contributed by the assembly of the microchips between waveguide flanges which has a reproducibility error between 2 and 6 dB measured for reference chips.