High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
Lin, C-H.,
Greene, B.,
Narasimha, S.,
Cai, J.,
Bryant, A.,
Radens, C.,
Narayanan, V.,
Linder, B.,
Ho, H.,
Aiyar, A.,
Alptekin, E.,
An, J-J.,
Aquilino, M.,
Bao, R.,
Basker, V.,
Breil, N.,
Brodsky, M.,
Chang, W.,
Clevenger, L.,
Chidambarrao, D.,
Christiansen, C.,
Conklin, D.,
DeWan, C.,
Dong, H.,
Economikos, L.,
Engel, B.,
Fang, S.,
Ferrer, D.,
Friedman, A.,
Gabor, A.,
Guarin, F.,
Guan, X.,
Hasanuzzaman, M.,
Hong, J.,
Hoyos, D.,
Jagannathan, B.,
Jain, S.,
Jeng, S-J.,
Johnson, J.,
Kannan, B.,
Ke, Y.,
Khan, B.,
Kim, B.,
Koswatta, S.,
Kumar, A.,
Kwon, T.,
Kwon, U.,
Lanzerotti, L.,
Lee, H-K,
Lee, W-H.,
Levesque, A.,
Li, W.,
Li, Z.,
Liu, W.,
Mahajan, S.,
McStay, K.,
Nayfeh, H.,
Nicoll, W.,
Northrop, G.,
Ogino, A.,
Pei, C.,
Polvino, S.,
Ramachandran, R.,
Ren, Z.,
Robison, R.,
Saraf, I.,
Sardesai, V.,
Saudari, S.,
Schepis, D.,
Sheraw, C.,
Siddiqui, S.,
Song, L.,
Stein, K.,
Tran, C.,
Utomo, H.,
Vega, R.,
Wang, G.,
Wang, H.,
Wang, W.,
Wang, X.,
Wehelle-Gamage, D.,
Woodard, E.,
Xu, Y.,
Yang, Y.,
Zhan, N.,
Zhao, K.,
Zhu, C.,
Boyd, K.,
Engbrecht, E.,
Henson, K.,
Kaste, E.,
Krishnan, S.,
Maciejewski, E.,
Shang, H.,
Zamdmer, N.,
Divakaruni, R.,
Rice, J.,
Stiffler, S.,
Agnello, P.
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