The static linearity performance metrics of the graphene-based field effect transistor (GFET) transconductor are studied and modeled. Closed expressions are proposed for second- and third-order harmonic distortion (HD2, HD3), second- and third-order intermodulation distortion ( \(\Delta \textrm {IM}_2\) , \(\Delta \textrm {IM}_3\) ), and second- and third-order intercept points ( \(A_{\textrm {IIP2}}\) , \(A_{\textrm {IIP3}}\) ). The expressions are validated through large-signal simulations using a GFET VerilogA analytical model and a commercial circuit simulator. The proposed expressions can be used during circuit design to predict the GFET biasing conditions at which linearity requirements are met.