We report nonvolatile resistive switching in anodic niobium pentoxide thin-film memory cells. Highly dielectric films were prepared at room temperature by the anodic oxidation of submicrometer-thick Nb films sputtered onto an Si wafer. After the electroforming process, sandwich memory cells demonstrate reproducible direct current and pulse mode switching between two resistance states with a resistance on-off ratio around . Low and high resististive states show ohmic conductivity and field-assisted Poole–Frenkel-type conductivity, respectively. Nonvolatile resistance storage was traced within 40 days to quantify retention characteristics of the memristor. The low-temperature anodic oxidation of Nb was found to be feasible to fabricate high-density cross-point memory with 3-D stack structures.