Die attach using a pick & place process based on pressure-assisted Ag sintering was described for the assembly of hybrid circuits designed for operation up to 250 °C and above. Silver pastes with different ratios of nano- and micro-particles were analyzed regarding porosity, Young`s modulus, adhesion, electrical, and thermal conductivity in dependence of the sintered layer thickness. Temperature load capability was demonstrated by shear tests of bonded devices after temperature cycling between 30 °C and 250 °C. Commercial flip-chip devices were successfully bonded on substrates using pressure-assisted silver sintering for the first time.