In this brief, the hole transport properties of narrow-width germanium-on-insulator (GeOI) pMOSFETs are investigated. We report, for the first time, +65% low-field hole mobility enhancement in narrow-width (0.29-mum effective widthW eff) versus large-width (10- mum W eff) GeOI mesa-isolated devices. The observed enhancement, which is independent of the device length down to 90 nm, is attributed to improved sidewall transport properties resulting in higher hole mobility on the sides than on the top of the devices. At high inversion charge density N inv~ 1013 cm-2, + 55% hole effective mobility improvement is preserved. The top and side low-field mobilities ( mutop and muside, respectively) were extracted, showing + 90% mobility improvement at the sides (mutop = 125 cm2/V middots-1 and muside= 240 cm2/V middots-1).