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A separated-double-heterostructure (SDH) laser on a p-type substrate with a pnp current blocking layer was fabricated using single-step MOCVD. A threshold current of 4.5 mA was obtained at room temperature under CW operation, and the linearity of the light output power/current curve was improved in comparison with that of an SDH laser on an n-type GaAs substrate.<<ETX>>