The ability to prepare homogeneous and highly crystalline planar perovskite films via the precise manipulation of a one-step solution-based crystallization process is still a key issue that hinders improvements to the ultimate photoelectric conversion efficiency (PCE) of devices. In this study, we prepared a series of planar CH3NH3PbI3 films using a chlorobenzene-assisted fast perovskite crystallization process with various precursor concentrations ranging from 30 to 50wt% and subsequent annealing at 50–90°C in order to investigate the effects of the precursor concentration and annealing temperature on crystallization and the photovoltaic performance. By precisely controlling the precursor concentration and annealing temperature, we obtained a homogeneous and highly crystalline planar perovskite film with high coverage under the optimized conditions (ca. 40wt% and 70°C), which led to sufficient light absorption and inhibited charge recombination, thereby yielding an enhanced PCE of 16.21%. Furthermore, the unsealed cell still retained a PCE of 10.98% after ambient air exposure for a period of 408h.