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The interaction between oxygen and a GaAs(100) surface in an electron cyclotron (ECR) plasma was studied by XPS and Auger spectroscopy. Both stoichiometric and Ga-rich oxides were found to be formed. The oxide composition of Ga 1+x1 As 1-x1 O 4-x1 /Ga 1+x2 As 1-x2 O 3 /Ga ...
A concise description of the application of laser interferometric thermometry (LIT) for exact calibration of the process manipulator thermocouple and, thus, for exact determination of the real substrate temperature in a MBE system is presented. A He-Ne laser visible 0.6328 μm light has been used as a probe, and a GaP plane-parallel wafer polished on both sides to an optical finish served as a calibration...
GaI spectral lines originating from the sputtering of GaAs under 6-10 keV Ar + ion bombardment have been studied. Results of the measurements on the target position, beam current and projectile energy dependences of 4172, 4033 and 2944 a lines are presented. It is found that the secondary photon emission yields can be well described by the model proposed by Wright and Gruen.
Polycrystalline CdTe films were deposited onto SnO 2 coated glass substrates using the electrodeposition technique with different deposition potentials, ranging from -670 to -725 mV, with respect to a saturated calomel electrode (SCE). The effect of the intercrystalline barrier on the carrier transport in CdTe films has been critically studied. The grain boundary potential (E b ),...
It is well known that magnetron sputtered films of low melting point Tm materials have (due to their crystallisation at low substrate temperatures, T < 100 o C) rough and diffusely reflecting surfaces, even when thin, for instance about 20 nm for in films. Only extremely thin films have a smooth and specular reflecting surface. This paper reports on the possibility of sputtering thick films...
The PdCu (110) plane, with Pd: Cu = 1:1 in the bulk, was prepared to have various surface compositions by applying cycles of argon ion sputtering (ion energy of =< 750 eV with ion current densities =< 1 μA/cm 2 ) and annealing temperatures (T AN ) of 420 < T < 820 K. With this preparation method different compositions of the top surface layers (TL) were obtained:(i)...
Titanium Schottky contacts were formed on n-type and p-type GaAs surfaces that were cleaned using different techniques. The Schottky contacts were subsequently aged at 200 o C for times up to 1000 h and their electrical parameters were observed as a function of aging time. Although the initial properties of Schottky contacts were nearly identical before any aging, photochemically passivated...
A thickness monitoring system for dielectric films using light of two wavelengths sequentially and which fakes account of the dispersion of the film and substrate materials enables an accuracy of 0.1 nm in optical thickness to be attained.
The sensitivity of a commercial Pirani gauge has been enhanced by use of a simple electronic circuit, the Halas-Kaminski bridge, which provides constant temperature of the wire and constant effective excitation voltage of the bridge. In this way, pressures from 10 -3 to 10 2 mbar may be measured.
Auger Electron Spectroscopy (AES) and Electron Energy Loss spectroscopy (EELS) have been used to study the cleaning of InSb(100) by argon ion bombardment. Ion beam etching of the InSb(100) surface is performed at low energy (500 eV), normal incidence and with a 2 μA cm -2 current density. EELS spectra are recorded at the primary energy (E p = 250 eV), for different incidence angles,...
Diamond film was synthesised on silicon and hard alloy substrates by electron-enhanced hot filament CVD, under different conditions. Raman analyses indicate that the samples are diamond with little non-diamond carbon. SIMS and AES analyses show that there is a little impurity in the diamond film and C 13 is enriched in the film growing process. The SEM micrograph and properties of the...
A Ti-B-N film has been obtained by two methods, which are EB-ion plating and N ion bombardment of a Ti-B film. TEM micrograph shows that the Ti-B-N film has a dense nano-crystalline structure. X-ray and electron diffraction indicate that the Ti-B-N film consists of fcc TiN with dispersed simple orthorhombic TiB, cubic BN and simple hexagonal Ti-B-N phases. The deposition temperature can be lowered...
The temperature dependence of the torque moment, galvanomagnetic Hall effect and magnetoresistance of ferrimagnetic amorphous films prepared by sputtering GD+Co were investigated in the temperature region which included a compensation temperature T K . Anomalies in the dependences of all three characteristics were observed and these were connected with an inhomogeneity in the chemical composition...
X-ray photoelectron spectroscopy (XPS) measurements of core-level and valence band have been used to study the practical Pd/Si interface. Evidence of silicide, Pd 2 Si, formed by chemical reaction at this interface has been obtained. A monotonic increase of the branching ratio for two Pd 3d spin-orbit split peaks of silicide, Pd 2 Si, with decreasing photoemission angles was measured...
For a better understanding of phenomena related to the operation of quadrupole mass filters with only an alternative bias, a computer program is developed for ion trajectory simulation. Trajectory features are described and discussed. Analytical expressions for the ion beam principal wave-lengths near the limits of stability are proposed. Simulated transmission curves are traced, compared with experiment...
In synchrotron-radiation (SR) beam lines, a beam viewer is needed for beam alignment after every optical element. A beam viewer comprising of a novel electromagnetically operated flipping mechanism has been designed and developed for operation in the ultra-high vacuum (uhv) environment. This flipping mechanism rotates a fluorescent screen by 45 o to bring it into the path of the synchrotron...
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