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Moisture durability of ZnO transparent conductive films was achieved with Ga heavy doping by off-axis type rf magnetron sputtering. The resistivity of 10.9at.% Ga-doped ZnO was 1.3×10 −3 Ωcm and changed less than 5% of resistivity over a 9400-h reliability test at a temperature of 85°C and humidity of 85%. The crystal structural analysis of the heavily Ga-doped ZnO films indicated that the...
Thermal annealing effects on Zn + ion-implanted silica glass (a-SiO 2 ) have been studied in order to control void formation. Void formation in a-SiO 2 with Zn + ion implantation and subsequent oxidation has been observed using transmission electron microscopy (TEM). Zn + ions of 60keV were implanted into a-SiO 2 to a fluence of 1.0×10 17 ions/cm...
High quality transparent conductive ZnO thin films with various thicknesses were prepared by pulsed filtered cathodic vacuum arc deposition (PFCVAD) system on glass substrates at room temperature.The high quality of the ZnO thin films was verified by X-ray diffraction and optical measurements. XRD analysis revealed that all films had a strong ZnO (200) peak, indicating c-axis orientation. The ZnO...
Transparent p–n heterojunctions composed of zinc oxide, copper–chromium, and indium tin oxide films were fabricated by the pulsed laser deposition technique on a glass substrate. The effect of the deposition temperature of the p-CuCrO 2 :Mg layer in the junction on photovoltaic properties was investigated. Post-annealing was performed to improve the crystallinity of the semiconductor layers...
Recent theoretical works have predicted that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS, magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers, resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid–solubility...
We prepared a ZnO/TiO 2 /ZnO multi-layer on quartz glass substrate via electron beam evaporation. Optical and structural properties of the ZnO/TiO 2 /ZnO multi-layer were investigated. The TiO 2 buffer layer is found to improve the crystallinity of the ZnO thin film. A green emission of the ZnO thin film deposited on the TiO 2 buffer layer was significantly enhanced...
ZnO nanowires were grown on Si (100) substrates with and without Au catalyst by chemical vapor deposition employing the vapor–liquid–solid (VLS) and vapor–solid (VS) mechanisms, respectively. The diameters of the resulting nanowires were in the range 80–150nm with typical length about 10μm. The near-band-edge (NBE) emission of ZnO nanowires grown with and without catalyst was observed at 382nm and...
Nitrogen ions were implanted into melt-grown ZnO (0001) substrates and subsequently annealed at 800°C under an oxygen ambient. The photoluminescence spectrum of N + -implanted ZnO excited by a He–Cd laser exhibited donor–acceptor pair (DAP) transition emission at 385nm with a full width at half maximum of 30nm at 10K. The DAP emission is associated with the acceptor energy of nitrogen in ZnO,...
In the present work, we have illustrated a new idea of codoping in ZnO with AlN as codopant to achieve p-ZnO. ZnO films doped with different concentrations of AlN were grown by RF magnetron sputtering. The AlN doped ZnO (ANZO) films grown on sapphire substrate were subjected to X-ray diffraction (XRD), reflectance measurements, Hall measurements, atomic force microscopy (AFM) and energy dispersive...
The article deals with structural properties of ZnO thin layers prepared on Si (111) by pulsed laser deposition at different pressures (1–35Pa) of ambient oxygen in the deposition chamber. The growth temperature was 400°C and a pulsed Nd:YAG laser was used at a wavelength of 355nm. Two parallel sets of samples deposited by ablation of different targets (a sintered ceramic pellet of ZnO and a pure...
Al doped zinc oxide (AZO) layers were deposited onto soda lime glass substrate by reactive magnetron sputtering. Properties of the reactive plasma were monitored. Our results show two characteristic behaviors (hysteresis and oscillation). A qualitative physical explanation for spontaneous and stable plasma oscillations is provided. Necessary conditions for the formation of the oscillation phenomena...
(ZnO) 1−x (GaN) x :Mn 2+ powder was prepared by a conventional solid-state reaction under an NH 3 gas flow. The sample preparation conditions including the mixing ratio of the raw materials, the annealing temperature, and the annealing time were varied. The crystallinity and the photoluminescence (PL) intensity of this fluorescent material were improved by increasing...
Transparent and conductive Al-doped ZnO (AZO) films have been grown with various thicknesses between 0.3 and 1.1 μm by magnetron sputtering at room temperature onto soda lime glass substrates. After deposition, the samples have been annealed at temperatures ranging from 150 to 450 °C in air or vacuum. The optical, electrical, and structural characteristics of the AZO coatings have been analyzed as...
The effect of implantation parameters on damage build-up in ZnO bombarded with Bi and Er ions is studied by Rutherford backscattering/channelling spectrometry. The results show that the damage accumulation behaviour in ZnO is different dramatically from that in other semiconductors. In particular, a variation of implantation parameters, such as collision cascade density, sample temperature and ion...
ZnO thin films were deposited on glass substrates at room temperature (RT) ∼500°C by pulsed laser deposition (PLD) technique and then were annealed at 150–450°C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results...
ZnO thin films were grown on Si (1 1 1) substrates by pulsed laser deposition (PLD) at various laser repetition frequency in order to investigate the structural and optical properties of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He–Cd laser. The structural properties of the films were investigated by XRD measurement. The results suggest...
The ZnO homojunction fabricated from undoped and 1mol% AlN doped (codoped) ZnO targets by RF magnetron sputtering has been reported. The grown films on Si (100) substrate have been characterized by X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Photoluminescence (PL) and Hall measurements. The increase of d-space value (compared with unstressed...
Metallic zinc film with various surface roughnesses was deposited on Si (100) substrates by ion beam sputter deposition utilizing beam energies at 8, 12 and 16 keV. The surface roughness of the metallic zinc film increased as ion beam energy increased and was found to act as a crucial factor for the formation of ZnO nanowires by subsequent thermal oxidation. ZnO nanowires with diameters of ∼30 nm...
We investigated the possibility of achieving p-type zinc oxide (ZnO) by RF diode sputtering and gallium–nitrogen co-doping. ZnO:Ga:N thin films were prepared with a different N 2 content in Ar/N 2 working gas, ranging from 0 to 100%, and at a varying substrate temperature, from room temperature (RT) to 300 °C. A hole conduction with maximum carrier concentration of 2.6 × 10 18...
ZnO layer in a role of passivation of the AlGaN/GaN-based high electron mobility transistors (HEMTs) is presented. The thin layer is deposited by pulsed laser deposition technique. It is fully compatible with the process technology of high electron mobility transistors prepared on AlGaN/GaN heterostructures due to its physical properties similar to the GaN. We have succeeded to (1) suppress the gate...
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