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Thin titanium nitride (TiN x ) films were deposited on silicon substrates by means of a reactive DC-magnetron plasma. Layers were synthesized under various conditions of discharge power and nitrogen flows in two operation modes of the magnetron (the so-called “balanced” and “unbalanced” modes). The optical constants of the TiN x films were investigated by spectroscopic ellipsometry...
We have investigated the concentration of fluorine in a newly formed film, which is located on the etched surface during modification of thermal silicon dioxide layer in reactive-ion-etching (RIE) system in CF 4 plasma. We try to find the correlation between parameters of the RIE process, depth and concentration of implanted fluorine ions, and finally, the thermal stability of fluorine ions...
The most promising technologies of silicon nitride hydrogenated layers for application in solar cells are based on plasma-chemical methods. In this paper, results concerning radio-frequency plasma-enhanced chemical vapour deposition (RF PE CVD) method applied in the technology of a-Si x N y :H layers on glass and polycrystalline silicon are presented. For the purpose of this research...
The aim of this work was to study the relationship between parameters of the electron field emission and the film deposition method. In this study two methods were applied: classical radio frequency plasma-assisted chemical vapor deposition (RF PACVD) to produce diamond-like carbon (DLC) layers and chemical vapor deposition (CVD) to produce carbon nanotubes (CNT). DLC layers were grown on n-type silicon...
Ability to determine local electric surface properties with a high resolution is a key issue in many modern industrial applications. In this article, authors will describe low-cost and reliable methods for investigations of electrical surface properties with a nanoscale resolution using a homebuilt modular tunneling/atomic force microscope with a quartz tuning fork as a probe. We will present the...
The measurements of the response—in terms of the conductance changes—to oxygen adsorption of tin dioxide (SnO 2 ) thin-film-based gas sensors were performed. The sensing SnO 2 layers were obtained by means of the rheotaxial growth and thermal oxidation (RGTO) method. The sensor responses were measured under a dry gas flow containing oxygen in nitrogen, within the range of temperature...
The numerical model of a thermoemission ion source was used for source ionization efficiency calculations. The dependency of ionization efficiency on working parameters like ionizer length and extraction voltage was discussed, and a good agreement with theoretical predictions was achieved. It was shown that increasing the ionizer length does not significantly change the obtained ionization efficiency...
A plasma reactor generating non-equilibrium plasma in a gliding discharge was applied as one of the modules of a new laboratory device for hazardous waste destruction. The degradation process of wastes containing an organic part was carried out in two stages. The first one consisted of thermal decomposition of wastes in an inert atmosphere (pyrolysis process in argon flow—the gaseous products are...
This work presents the influence of annealing on the structure and stoichiometry of europium (Eu)-doped titanium dioxide (TiO 2 ). Thin films were fabricated by magnetron sputtering from a metallic Ti–Eu target in oxygen atmosphere and deposited on silicon and SiO 2 substrates. After deposition the selected samples were additionally annealed in air up to 1070K.Film properties were...
The composite films composed of palladium (Pd) nanocrystals and Pd–fullerenes nanocrystals obtained by physical vapor deposition (PVD) method were studied. These types of films can be applied as active material for sensor application.The films were prepared by PVD technique. They were deposited on different substrates and contained Pd in various concentrations. The structure and composition of the...
We have investigated the effect of silicon dioxide reactive ion etching (RIE) parameters and the type of plasma on the concentration of fluorine and its chemical compounds, such as CF, SiF and SiOF, in the polymer layer that is formed during this process on the top of etched layer, and their thermal stability.The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon...
It is well known that the magnetron self-sustained sputtering (SSS) process can be achieved in the direct current (DC) operation mode (DC-SSS) if certain conditions are fulfilled: high self-sputtering yield of the target material (theoretically Y>1), appropriate magnetron source design, high target power density to ensure high ionization level of the sputtered material. The main disadvantage of...
We investigate selected problems of the molecular beam epitaxy (MBE) technology of fabrication of semiconductor saturable absorbers, which are the main parts of broadband saturable absorber mirrors. These mirrors are designed for mode locking of solid-state lasers emitting in 808nm band. We analyzed growth conditions during the MBE processes of fabrication of test structures containing the central...
Molecular dynamics computer simulations have been employed to model ejection of particles from Ag{111} metal substrate and thin benzene overlayer bombarded by fullerene cluster projectiles. The sputtering yields are analyzed depending on the size (from C 20 up to C 540 ) and the kinetic energy (5–20keV) of a projectile. It has been found that for clean metal substrate bombarded by...
GaN and related III–V nitride materials have been applied for fabrication of electronic and optical devices. The most important factor limiting the mass production of devices based on III–V nitride materials is the high cost of substrates and the elaborate growth techniques. The lack of large, bulk GaN substrates causes that the epitaxial layer of nitrides must be grown on heteroepitaxial substrates...
In this work we investigate the surface and interfacial properties of Fe/Cr and Cr/Fe bilayers before and after annealing using Auger electron spectroscopy (AES). The roughness of the interface is also determined with the X-ray reflection method. The fitted values of inelastic mean free path λ Cr in Fe reproduce the calculated value for Cr in Fe well, whereas the values of λ Fe in Cr ...
The study examines the possibility of fabrication of pedestal oxynitride layers for high-k gate stacks by means of nitrogen implantation from r.f. plasma alone or followed immediately by the plasma oxidation process.The obtained layers were characterized by means of ellipsometry, X-ray photoelectron spectroscopy (XPS) and ultra low energy secondary ion mass spectrometry (ULE-SIMS). The results of...
The synthesis of silver nanoparticles during electrolysis of NaCl solutions and silver electrodes was controlled by using UV absorption and mass-spectrometric methods. For mass-spectrometric measurements, the laser desorption/ionization method and a time of flight (TOF) spectrometer were employed. Results of investigations show the possibility of formation of small silver nanoparticles (of the cluster...
In this paper, the optimization of ohmic contacts for semiconductor lasers based on InGaAs/GaAs/GaAlAs layers is reported. Transmission electron microscopy (TEM) and electrical methods were used to study extensively the Pt/Ti/Pt/Au metallization system. The contact fabrication technology was optimized towards achieving the lowest electrical resistance. The technological control and optimization concerned...
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