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Amorphous transparent conductive oxide films in the In–Zn–O system were deposited on polycarbonate (PC) substrates by simultaneous DC sputtering of an In 2 O 3 target and a ZnO target with either 4wt% Al 2 O 3 or 7.5wt% Ga 2 O 3 impurities. Although the resistivity of the amorphous, non-doped In–Zn–O film on PC was about one order of magnitude higher...
Influence of incorporation of Ga in amorphous In–Zn–O transparent conductive oxide films was investigated as a function of Zn/(Zn+In). For In–Zn–O films with no Ga 2 O 3 , the range of Zn/(Zn+In) ratio where the amorphous phase appears became narrow at a substrate temperature of 250°C. With increasing Ga 2 O 3 quantity, amorphous films were obtained even at a high substrate...
To obtain TCO films for wavelengths shorter than the visible range, Ga 2 O 3 was added to the In 2 O 3 –ZnO system as an impurity. Using pulsed laser deposition (PLD), two kinds of targets, InGaZnO 4 and InGaZn 3 O 6, were deposited. Although the In–Ga–Zn–O films obtained deviated from the stoichiometry of InGaZnO 4 , they were amorphous...
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