To obtain TCO films for wavelengths shorter than the visible range, Ga 2 O 3 was added to the In 2 O 3 –ZnO system as an impurity. Using pulsed laser deposition (PLD), two kinds of targets, InGaZnO 4 and InGaZn 3 O 6, were deposited. Although the In–Ga–Zn–O films obtained deviated from the stoichiometry of InGaZnO 4 , they were amorphous at a substrate temperature below 250°C. We obtained the lowest resistivity of 2.77×10 −3 Ωcm within the present experiment at a carrier concentration of 1.38×10 20 cm −3 and a Hall mobility of 16.6cm 2 /Vs. The optical band gap energy shifted to higher energies and the transmittance at the blue range was improved dramatically as compared with similar amorphous IZO films.