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The process of interdiffusion in thin film Cu–Pd multilayer system was studied in the temperature range of 393–493K for different annealing times using Auger electron spectroscopy (AES) in conjunction with an argon ion sputtering. The changes in Auger depth profiles caused by heating have been converted into compositional changes of diffusing species. On the basis of the concentration distribution...
A pulsed hollow cathode discharge in Ar and Ne is used to investigate the temporal evolution of sputtered Mg density in the afterglow phase. A diffusion model of this transport is assumed, including the process of reflection by the wall (Chantry PJ, Phelps AV, Shultz GJ. Phys Rev 1966;152:81-9 [1]; Rusinov IM, Paeva GW, Blagoev AB. J Phys D: Appl Phys 1997;30:1878-84 [2]; Suzuki S. Itoh H, Ikuta N,...
A multilayer structure composed of 10 sputter-deposited alternating Ni and Al thin films with an average composition of Ni 0.50 Al 0.50 was ion mixed at different temperatures between -145 o C and +430 o C. Ion mixing of Ni/Al multilayers was performed in an implanter using 350keV Ar ions at a dose of 1x10 16 ionscm - ...
The radiation defect formation accompanied with the paramagnetic centre creation by multistage boron ion implantation into the polyamide-6 films was studied using the ESR technique and electrical methods. It was found that the multistage implantation with the energy increasing from step to step results in the rearrangement of the polymer layer being accompanied with the compensation of the terminated...
Scanning electron microscopy, secondary ion-mass spectrometry, and XRD structure analysis were used to study the effects of irradiation of a thin Al/Ni film on an Fe substrate system by a high-power ion beam with an energy density ~50J/cm 2 . The irradiated surface is not uniform and contains no craters. A mixed layer which improves the corrosion resistance and the micro-hardness is formed...
The present review of methods reveals some new theoretical aspects and findings concerning suppression of the hydrogen outgassing rate q out from austenitic stainless steels in relation to the ultrahigh vacuum and extreme high vacuum.The review includes work on thermal treatment and modelling, permeation rate and the role of surfaces, diffusion barriers and coatings.
A study of ruthenium dioxide films, deposited by an MOCVD method on Si/SiO 2 , Si/YSZ, LaAlO 3 , MgO, SrTiO 3 , and sapphire single crystal substrates, was performed using RBS, ERD and AFM methods with the aim to characterize the elemental composition, microstructural quality, and homogeneity of the films. The element depth distribution and thickness of the ruthenium oxide...
The aim of this work is to optimize the annealing conditions of gallium arsenide implanted with Si ions. Four types of substrates were investigated: undoped GaAs and GaAs doped with either Te; Si or Zn. Implantation was performed at room temperature to a dose of 1.5x10 15 cm -2 at an energy of 150keV. The samples were annealed at 1000 o C for 1h under the following...
Interdiffusion in sputter deposited bi- and multilayer structures onto smooth silicon substrates consisting of crystalline c-Al and amorphous a-Si layers was studied. The bilayer consisted of c-Al(300nm) and a-Si(400nm) layers and the c-Al/a-Si multilayer of four pairs of c-Al(45nm) and a-Si(85nm) layers.Diffusion processes took place in the isothermally heated c-Al/a-Si structures in an argon atmosphere...
The interaction potential of an atom-metal surface system was constructed by the 5-parameter Morse potential (5-MP) method. The adsorption and diffusion dynamics of oxygen and nitrogen atoms on flat and stepped Pd and Ni single-crystal surface systems were selected to validate the 5-MP method. The calculated data of adsorption sites, adsorption geometry, binding energy, eigenvibration and the diffusion...
This paper studies the kinetics of hydrogen absorption for a non-evaporable getter material, and presents a basic gettering model. Hydrogen uptake takes three processes in this model: molecular dissociated chemisorption on the surface, atomic penetration from the surface to the bulk, and diffusion in the body. For low hydrogen bulk concentration a lattice-gas model is adopted to describe the diffusion...
In this study, the growth kinetics of titanium nitride layer deposited on pre-nitrided AISI 1020 steel samples by thermo-reactive diffusion (TRD) techniques in a solid medium was reported. Steel was at first tufftrided and then titanium nitride coating treatment was performed in a powder mixture consisting of ferro-titanium, ammonium chloride and alumina at 1173, 1223 and 1273K for 1-4h. Titanium...
The aim of this work is to compare carrier concentration, diffusion coefficient and shape of the zinc atomic profile in InP layers treated under different annealing conditions. Zn implanted InP:S (4×10 18 at/cm 3 —active dopant) bulk samples were investigated. Samples were implanted to a fluence of 1×10 16 cm −2 at an energy of 150keV and then coated with a 100nm thick...
Annealing effects in nano-sized gadolinium particles deposited on silicon substrates were studied with particular emphasis on the interface between the gadolinium particles and silicon substrate. Because of its sensitivity to such a buried structure, the specular X-ray reflectivity technique was employed in addition to analysis by in-plane X-ray diffraction and atomic-force microscopy. The samples...
Measurements providing experimental evidence for linear interface shift and interface sharpening, as typical diffusion phenomena on a nanoscale, in different bi- or multilayer systems (Si/Ge, Cu/Ni, Mo/V) and results of computer simulations are presented on the basis of the research experience of our group. Special emphasis is given to sample preparation and measuring techniques capable of diffusion...
The interfacial structure of the Mg/Al diffusion-bonded joint was studied by means of SEM, EPMA and TEM. The test results indicated that the interface zone of Mg/Al diffusion-bonded joint included the transition region on Mg side, the mid-diffusion region and the transition region on Al side. The concentration distribution of Mg and Al atoms in the diffusion zone includes three different regions....
80nm-thick Ni 50 Fe 50 layers were sputter-deposited on glass substrates at 400°C and then Au layers were sputter-deposited on the Ni 50 Fe 50 layers. The Au/Ni 50 Fe 50 bilayer films were annealed in a vacuum of 5×10 −4 Pa from 250 to 450°C for 30min or 90min. The characteristics of the Au layers were studied by Auger electron spectroscopy,...
Rutherford backscattering (RBS) has been used to determine diffusion coefficients of indium atoms in semi-insulating (100) GaAs implanted with 250keV In + ions at a fluence of 3×10 16 cm −2 and isobarically annealed at 600 and 800°C temperature. Computer modeling of the indium depth profiles based on Ga vacancy-mediated diffusion has shown good agreement with the RBS experimental...
Metallic Ru and Hf-based dielectrics such as HfO 2 , HfSiO x and HfSiON, are promising materials for the gate electrode and gate dielectrics, respectively. This paper reports on the thermal stability of gate stack systems comprised of Ru/Hf-based dielectrics. Layers of both types of material were prepared on Si substrate by metal-organic chemical vapour deposition (MOCVD). The stacks...
The two-dimensional model of arsenic diffusion in silicon at rapid thermal annealing is presented. A method of solving the nonlinear differential equations system is specified. Model calculations were performed for 15keV As + implanted in Si and annealed for 10min at 950°C. The results are in reasonable agreement with the experimental data, including the presence of local maximum of arsenic...
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