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The process of interdiffusion in thin film Cu–Pd multilayer system was studied in the temperature range of 393–493K for different annealing times using Auger electron spectroscopy (AES) in conjunction with an argon ion sputtering. The changes in Auger depth profiles caused by heating have been converted into compositional changes of diffusing species. On the basis of the concentration distribution of Pd and Cu inside the Pd–Cu multilayer structure the interdiffusion coefficients have been obtained in the studied temperature range. Interdiffusion data have been discussed and compared with diffusion parameters obtained by using different methods.