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Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon, 440-746, South Korea School of Metallurgical and Materials Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea School of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, South KoreaDeposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.CeO2r.f.-magnetron sputteringPreferred orientationSi(100)CeO2(200)
Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon, 440-746, South Korea School of Metallurgical and Materials Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea School of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, South KoreaDeposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.CeO2r.f.-magnetron sputteringPreferred orientationSi(100)CeO2(200)
Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon, 440-746, South Korea School of Metallurgical and Materials Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea School of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, South KoreaDeposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.CeO2r.f.-magnetron sputteringPreferred orientationSi(100)CeO2(200)
Department of Physics and Institute of Basic Science, Sungkyunkwan University, Suwon, 440-746, South Korea School of Metallurgical and Materials Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea School of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, South KoreaDeposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.CeO2r.f.-magnetron sputteringPreferred orientationSi(100)CeO2(200)