Hetero-epitaxial growth of the cubic single crystalline HfO2 film as high k materials by pulsed laser ablation

We report a hetero-epitaxial growth of cubic single crystalline HfO ₂ film on Si substrates as high k materials by pulse laser ablation (PLA) at 820°C. To eliminate the interfacial defects, the HfO ₂ film has then been annealed at 900°C for 5min in N ₂ . Reflection high-energy electron diffraction (RHEED) results indicate orientation of the HfO ₂ film on Si substrates corresponding to (001)HfO2∥(001)Siand[011]HfO2∥[011]Si. An interface layer has been revealed by high-resolution transmission electron microscope (HRTEM). Through capacitance–voltage (C–V) and current–voltage (I–V), it has been obtained that the leakage current of the HfO ₂ gate insulator with dielectric constant of 26 is 5×10 ⁻⁶ A/cm ² at −1V.