This work presents a new two-terminal switching amorphous silicon (a-Si:H) device for active flat panel display, The device is a multilayer stacked structure n-i-[delta ]p-i-n. The electrical characteristics of the diode are strongly determined by its geometry and by the doping level of the [delta ]p layer. The current-voltage data show a symmetrical behaviour with an OFF current of 10 [ m i n u s ] 1 1 A and an ON/OFF current ratio of six orders of magnitude calculated at applied voltage of 3 and 1 V. An active matrix based on this device has been realized by using only two photolithographic masks.