Ferroelectric polymer memory transistors were fabricated by using PMMA (poly methyl metacrylate)-blended P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) as the gate ferroelectric film. The film was spin-coated on an SiO 2 -coated n-type Si wafer with the p-type source and drain regions and Au electrodes for the source, drain, and gate terminals were formed by thermal evaporation, followed by wet chemical etching. The on/off ratio and memory window width of the fabricated ferroelectric-gate FET were typically 10 7 and 5 V at the gate voltage swing of ±11 V, respectively. As for the data retention characteristics, the current on/off ratio of approximately 10 3 was obtained at 10 3 s after write operation.