Atmospheric pressure vapor-phase growth was demonstrated for the growth of zinc oxide (ZnO) films on sapphire (0001) substrates. The X-ray diffractogram showed a typical pattern of ZnO having a hexagonal structure, and a full-width at half-maximum (FWHM) of 23.3min was obtained in the X-ray diffraction profile. The growth rate of the ZnO film increased from 0.1 to 8.0μm/h with increasing growth temperature and input partial pressures of ZnCl 2 and O 2 , respectively. A strong band edge emission at 370.0nm was observed in the photoluminescence spectra at 20K.