In this study, we investigate the low frequency current noise in 2.5 nm MOSFETs undergoing soft breakdown. Statistic experiments show that gate current noise belongs to low frequency 1/f γ noise, where 1.5<γ<2. The soft breakdown shows fractal properties, and its fractal dimension is obtained as 1.5<D b <1.75. An improved dynamic percolation with trap inhomogeneous distribution is introduced to describe the low frequency current noise. In addition, the effects of voltage and temperature on the power-law exponent γ are given, and also the Weibull statistics distribution of power-law exponent γ is given.