Optica Applicata > 2007 > Vol. 37, nr 4 > 327-334
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journal ISSN : | 0078-5466 |
journal e-ISSN : | 1899-7015 |
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[1] SAITO W., TAKADA Y., KURAGUCHI M., TSUDA K., OMURA I., Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications, IEEE Transactions on Electron Devices 53(2), 2006, pp. 356–62.
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[2] BERNAT J., JAVORKA P., MARSO M., KORDOS P., Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation, Applied Physics Letters 83(26), 2003, pp. 5455–7.
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[3] MAEDA N., HIROKI M., WATANABE N., ODA Y., YOKOYAMA H., YAGI T., MAKIMOTO T., ENOKI T., KOBAYASHI T., Systematic study of insulator deposition effect (Si3N4, SiO2, AlN, and Al2O3 ) on electrical properties in AlGaN/GaN heterostructures, Japanese Journal of Applied Physics, Part 1 46(2), 2007, pp. 547–54.