-
[1] J. Novák, S Hasenöhrl, M. Kuliffayová and J. Oswald: “Gettering properties of PrO2 in In0.53Ga0.47As LPE growth”, J. Cryst. Growth, Vol. 110, (1991), pp. 862–866. http://dx.doi.org/10.1016/0022-0248(91)90644-K
-
[2] B. Põdör, L. Csontos, K. Somogyi and D. Vignaud: “Photoluminescence and double crystal X-ray study of InGaAs/InP: Effect of rare earth (dysprosium) doping during growth”, Acta Phys. Pol. A, Vol. 87, (1995), pp. 465–468.
-
RELATION NAME
-
[4] P. Favennec, H. Lapos-Haridon, M. Salvi, D. Moutonnet and Y. Le Guillou: “Luminescence of erbium implanted in various semiconductors IV, III-V and II-VI materials”, Electron. Lett., Vol. 25, (1989), pp. 718–719.
-
RELATION NAME
-
RELATION NAME
-
RELATION NAME
-
[8] N. Veissid, C. An, A. Ferreira da Silva and J. Pinto de Souza: “Gap Energy Studied by Optical Transmittance in Lead Iodide Monocrystals Grown by Bridgman's Method”, Mater. Res., Vol. 2, (1999), pp. 279–281.
-
RELATION NAME
-
[10] M. Matuchova, K. Zdansky, M. Hassan, J. Zavadil, O. Prochazkova and J. Maixner: “Study of Influence of the Rare Earth Elements on the Properties of Lead Iodide”, In: 14 th International Conference on Crystal Growth (ICCG14), Grenoble, France, 2004.