Open Physics > 2006 > 4 > 1 > 117-123
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journal ISSN : | 2391-5471 |
DOI | 10.1007/s11534-005-0010-x |
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[1] J. Novák, S Hasenöhrl, M. Kuliffayová and J. Oswald: “Gettering properties of PrO2 in In0.53Ga0.47As LPE growth”, J. Cryst. Growth, Vol. 110, (1991), pp. 862–866. http://dx.doi.org/10.1016/0022-0248(91)90644-K
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[2] B. Põdör, L. Csontos, K. Somogyi and D. Vignaud: “Photoluminescence and double crystal X-ray study of InGaAs/InP: Effect of rare earth (dysprosium) doping during growth”, Acta Phys. Pol. A, Vol. 87, (1995), pp. 465–468.
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