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A new 600V Partial Silicon-on-Insulator (PSOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor with step-doped drift region (SDD) is introduced to improve breakdown voltage (BV) and reduce on-resistance (Ron). The step-doped profile induces an electric field peak in the surface of the device, which can improve the surface field distribution and the doping accommodation...
Method of drain bias sweeping is reported to reduce the gate-induced drain leakage (GIDL) current but with other electrical parameters unaffected for p-type polycrystalline silicon thin-film transistors. It is proposed to be due to local electron trapping in the gate oxide near the drain after drain-bias sweeping such that the gate bias effect is screened. The effects of drain bias sweeping can be...
A digital multifunctional laser machining system, including mechanical structure, software of computer and control system, is designed. After briefly describing the laser machining system and principle of data processing, some objects are processed by CO2 laser (75W). By analyzing experimental data and adding in error compensation, the structures with better quality are machined. In order to realize...
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